| PART |
Description |
Maker |
| APT10030L2VR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
| APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
| APT10025PVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 33A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| SDA167HCGUF SDA167HC SDA167HCEUF SDA167HCFUF |
33A / 600 - 1000V THREE PHASE BRIDGE RECTIFIER ASSEMBLY
|
SSDI[Solid States Devices, Inc]
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT10050JVFR |
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
| APT10050JN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 20.5A 0.50 Ohm
|
Advanced Power Technology
|
| STU6NA100 |
N - CHANNEL 1000V - 1.45W - 6A - Max220, FAST POWER MOS TRANSISTOR
|
SGS Thomson Microelectronics
|
